Significant price hikes on 5090, L40S and Enerperise Blackwell Series GPUs continues into Q1 2026. Please note Credit Card payments will only work if USD or AED currency is selected on top right corner of the website. For US customers; before placing an order for any crypto miners, inquire with a live chat sales rep or toll-free phone agent about any potential tariffs. HGX B200 lead times are now between 8-20 weeks for Golden Sku selections, with custom BOMs exceed 26 weeks. HGX H200 offerings in stock, as well as limited HGX B300. We are now certified partners of Supermicro in both NA and MENA regions.
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The Hard Drive Features 3.84TB Storage Capacity. NVMe Solid State Drive (SSD) Built With PCIe x4 Lanes Generation 5.0 Interface, Designed in U.2 Form Factor, Thickness of 15mm. Samsung V6 (128 Layer) V-NAND Triple-Level Cell (TLC) Technology, With a durability rating of 1.0 DWPD. Designed For Data Center Applications. Features: Self-Encrypting Drives (SED) And TCG Enterprise. Samsung PM9D3a Series - OE
The Samsung PM9D3a MZWL63T8HFLT solid-state drive offers 3.84 TB of storage capacity, making it a solution for data-intensive applications. With an internal data rate of 12,000 Mbps, this internal hard drive ensures rapid data transfers and quick access to files. Designed in the compact M.2 form factor, it fits into various setups while maintaining performance. The PCI Express 5.0 x4 (NVMe) interface enhances speed, providing low latency and high throughput for seamless performance.
With random read speeds of up to 20,00000 IOPS and random write speeds reaching 250,000 IOPS, the Samsung PM9D3a caters to demanding workloads, ensuring less waiting time and more productivity. Whether for gaming, content creation, or enterprise-level tasks, this SSD delivers performance that meets the needs of modern users. The durability is backed by a Drive Writes Per Day (DWPD) rating of 1, making it a reliable choice for daily operations.

| Device Type | NVMe Solid state drive - internal | |
| Capacity | 3.84TB | |
| Form Factor | U.2 15mm | |
| Interface | PCIe 5.0 x4 | |
| NAND Flash Memory Type | Samsung V6 (128 layer) V-NAND TLC | |
| Performance | ||
| Read | 12000 MB/s | |
| Write | 6800 MB/s | |
| 4KB Random Read | 1700K IOPS | |
| 4KB Random Write | 250K IOPS | |
| Endurance DWPD | 1DWPD | |
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